N-type monocrystalline silicon wafers
0.6-1.6 <Ω·cm>
Resistivity
≤12 <ppma>
Oxygen content
≤1 <ppma>
Carbon content
≥800 <µs>
Lifetime
Material properties
Item
Specifications
Test Method
Growth method
Czochralski technique
--
Crystallinity
Monocrystalline
--
Conductive type
N-Type
PN testing machine
Dimensions
M10：182.2*182.2*φ247mm
G12：210*210*φ295mm
G12-R：182.3*210*φ272mm
AOI
Thickness
M10：90-160µm
G12：90-160µm
G12-R：90-160µm
AOI
| Item | Specifications | Test Method |
|---|---|---|
| Growth method | Czochralski technique | -- |
| Crystallinity | Monocrystalline | -- |
| Conductive type | N-Type | PN testing machine |
| Dimensions | M10：182.2*182.2*φ247mm G12：210*210*φ295mm G12-R：182.3*210*φ272mm |
AOI |
| Thickness | M10：90-160µm G12：90-160µm G12-R：90-160µm |
AOI |
Electrical properties
Item
Specifications
Test Method
Resistivity
0.6-1.6<Ω·cm>
AOI
Lifetime
≥800<µs>
BCT-400
Oxygen content
≤12<ppma>
FTIR (ASTM F121-83)
Carbon content
≤1<ppma>
FTIR (ASTM F123-91)
| Item | Specifications | Test Method |
|---|---|---|
| Resistivity | 0.6-1.6<Ω·cm> | AOI |
| Lifetime | ≥800<µs> | BCT-400 |
| Oxygen content | ≤12 |
FTIR (ASTM F121-83) |
| Carbon content | ≤1 |
FTIR (ASTM F123-91) |
Contact Us
Gokin provides you with professional consulting services, N-type silicon wafer product information, photovoltaic industry business models, and full lifecycle operation and maintenance capabilities. Please feel free to call us.
Contact UsSocial media:
Tel
0756-6836188
gk@gokinsolar.com
Tel
0756-6836188
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gk@gokinsolar.com
